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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB707 2SB708
DESCRIPTION *With TO-220C package *Complement to type 2SD568/569 APPLICATIONS *For low frequency power amplifier low speed switching industrial use
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO PARAMETER Collector-base voltage 2SB707 VCEO Collector-emitter voltage 2SB708 VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open collector Open base -80 -7 -7 -15 -3.5 1.5 W V A A A CONDITIONS Open emitter VALUE -80 -60 V UNIT V
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2SB707 V(BR)CEO Collector-emitter breakdown voltage 2SB708 VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-5A;IB=-0.5 A IC=-5A;IB=-0.5 A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-1V IC=-5A ; VCE=-1V IC=-10mA; IB=0 CONDITIONS
2SB707 2SB708
SYMBOL
MIN -60
TYP.
MAX
UNIT
V -80 -0.5 -1.5 -10 -10 40 20 200 V V A A
hFE-2 classifications R 40-80 O 60-120 Y 100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB707 2SB708
Fig.2 Outline dimensions (unindicated tolerance:0.10 mm)
3


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